SUPERLATTICE AND MULTILAYER STRUCTURES BASED ON FERROMAGNETIC SEMICONDUCTOR (GA,MN)AS

Citation
A. Shen et al., SUPERLATTICE AND MULTILAYER STRUCTURES BASED ON FERROMAGNETIC SEMICONDUCTOR (GA,MN)AS, Physica. B, Condensed matter, 251, 1998, pp. 809-813
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
251
Year of publication
1998
Pages
809 - 813
Database
ISI
SICI code
0921-4526(1998)251:<809:SAMSBO>2.0.ZU;2-X
Abstract
Ferromagnetic semiconductor (Ga,Mn)As-based superlattice and multilaye r structures, (Ga,Mn)As/(Al,Ga)As and (Ga,Mn)As/(In,Ga)As, were prepar ed by molecular beam epitaxy. X-ray diffraction measurements showed th at the thickness and alloy composition in the superlattices were well controlled. Magnetotransport measurements revealed the existence of fe rromagnetic order at low temperatures. Resonant tunneling diodes with (Ga,Mn)As showed features that are well explained by a simple physical picture. (C) 1998 Elsevier Science B.V. All rights reserved.