QUANTUM HALL-EFFECT TRANSITIONS IN A BILAYER ELECTRON-SYSTEM IN TILTED MAGNETIC-FIELDS

Citation
Ts. Lay et al., QUANTUM HALL-EFFECT TRANSITIONS IN A BILAYER ELECTRON-SYSTEM IN TILTED MAGNETIC-FIELDS, Physica. B, Condensed matter, 251, 1998, pp. 832-835
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
251
Year of publication
1998
Pages
832 - 835
Database
ISI
SICI code
0921-4526(1998)251:<832:QHTIAB>2.0.ZU;2-1
Abstract
The v = 2/3 fractional quantum Hall effect (FQHE) in a wide, single qu antum well subject to tilted magnetic fields makes a one-component to two-component transition induced by the in-plane component of the magn etic field. To analyze the experimental data we make a self-consistent , local-density-approximation calculation of the electronic structure of the wide quantum well in tilted magnetic fields. Our results are qu antitatively consistent with the earlier experimental work on the dens ity driven one-component to two-component FQHE transition in this syst em. (C) 1998 Elsevier Science B.V. All rights reserved.