ANGULAR DEPENDENT MAGNETORESISTANCE OSCILLATION IN GAAS ALGAAS SUPERLATTICE/

Citation
M. Kawamura et al., ANGULAR DEPENDENT MAGNETORESISTANCE OSCILLATION IN GAAS ALGAAS SUPERLATTICE/, Physica. B, Condensed matter, 251, 1998, pp. 882-886
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
251
Year of publication
1998
Pages
882 - 886
Database
ISI
SICI code
0921-4526(1998)251:<882:ADMOIG>2.0.ZU;2-H
Abstract
Vertical transport in GaAs/AlGaAs semiconductor superlattice has been studied as a function of magnetic field angle. A series of resistance peaks corresponding to the angular dependent magnetoresistance oscilla tion (ADMRO) effect were investigated. The present samples have higher carrier densities and wider well widths than previously studied. This allowed us to observe higher order ADMRO peaks. Another resistance pe ak is found at theta = 90 degrees(B parallel to layer). The origin of this peak structure is discussed in terms of occurrence of closed orbi ts in some part of a weakly corrugated cylindrical Fermi surface for t his field orientation. (C) 1998 Elsevier Science B.V. All rights reser ved.