FAR-INFRARED EMISSION AND POSSIBILITY OF POPULATION-INVERSION OF HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/

Authors
ALESHKIN VY ANDRONOV AA ANTONOV AV BEKIN NA GAVRILENKO VI MALKINA IG REVIN DG USKOVA EA ZVONKOV BN
Citation
Vy. Aleshkin et al., FAR-INFRARED EMISSION AND POSSIBILITY OF POPULATION-INVERSION OF HOT HOLES IN MQW INGAAS GAAS HETEROSTRUCTURES UNDER REAL-SPACE TRANSFER/, Physica. B, Condensed matter, 251, 1998, pp. 971-975
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
251
Year of publication
1998
Pages
971 - 975
Database
ISI
SICI code
0921-4526(1998)251:<971:FEAPOP>2.0.ZU;2-P
Abstract
Hot holes in strained MQW InxGa1-xAs/GaAs heterostructures excited at lateral charge transport are probed by far-infrared emission and band gap photoluminescence. Highly nonequilibrium phenomena discovered are shown to result from the real space transfer. New mechanism for the po pulation inversion between continuum and shallow bound states in quant um wells in high lateral electric fields is put forward. (C) 1998 Else vier Science B.V. All rights reserved.