COMMENTS ON A SMALL-SIGNAL MOSFET MODEL FOR RADIO-FREQUENCY IC APPLICATIONS

Authors
TIN SF OSMAN AA MAYARAM K
Citation
Sf. Tin et al., COMMENTS ON A SMALL-SIGNAL MOSFET MODEL FOR RADIO-FREQUENCY IC APPLICATIONS, IEEE transactions on computer-aided design of integrated circuits and systems, 17(4), 1998, pp. 372-374
Citations number
3
Categorie Soggetti
Computer Science Hardware & Architecture","Computer Science Interdisciplinary Applications","Computer Science Hardware & Architecture","Computer Science Interdisciplinary Applications","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on computer-aided design of integrated circuits and systems → ACNP
ISSN journal
02780070
Volume
17
Issue
4
Year of publication
1998
Pages
372 - 374
Database
ISI
SICI code
0278-0070(1998)17:4<372:COASMM>2.0.ZU;2-A
Abstract
A comparison is provided between the recent small-signal analysis for the distributed gate resistance in MOSFET's at RF frequencies' and the lumped-element model of an earlier publication for various CMOS techn ologies, An improved lumped-element model is also proposed. It is demo nstrated that simplified lumped-element circuits are adequate for mode ling the effect of distributed gate resistance on both the y parameter s and the thermal noise.