ONE-STEP GROWN LATERAL P-N-JUNCTIONS ON GAAS(001) PATTERNED SUBSTRATES WITH (110)SIDEWALLS BY MOLECULAR-BEAM EPITAXY

One-step growth of lateral p-n junctions on GaAs patterned substrates is investigated to demonstrate the possibility of obtaining a current confinement structure by utilizing the amphotericity of Si. Rectangula r patterns of the (001) plane encircled by four {110} sidewalls were e tched on the substrates by means of anisotropic etching of an NH4OH+H2 O2+H2O solution with high H2O content. Si-doped GaAs layers are grown on thus-prepared patterned substrates by molecular beam epitaxy. A cat hodoluminescence study shows the layers grown on the {110} sidewalls a n p-type, whereas they are n-type on the {001} surface. The potential of the lateral p-n junctions for forming a current confinement structu re for surface light emitting devices is discussed.