ELECTRONIC-STRUCTURE OF III-V NITRIDE SEMICONDUCTORS

Authors
AOURAG H CERTIER M
Citation
H. Aourag et M. Certier, ELECTRONIC-STRUCTURE OF III-V NITRIDE SEMICONDUCTORS, Journal of physics and chemistry of solids, 59(6-7), 1998, pp. 1145-1156
Citations number
42
Categorie Soggetti
Physics, Condensed Matter",Chemistry
Journal title
Journal of physics and chemistry of solids → ACNP
ISSN journal
00223697
Volume
59
Issue
6-7
Year of publication
1998
Pages
1145 - 1156
Database
ISI
SICI code
0022-3697(1998)59:6-7<1145:EOINS>2.0.ZU;2-V
Abstract
Electron-positron momentum densities in III-V nitride semiconductors ( BN, GaN and AIN) are calculated along two different directions [001] a nd [110] with the use of the empirical pseudopotential method coupled with the independent particle method. The results are compared with th ose of other III-V semiconductors. A favorable trend is found. (C) 199 8 Elsevier Science Ltd. All rights reserved.