THE IMPROVEMENT OF LIQUID-PHASE DEPOSITION OF SILICON DIOXIDE WITH HYDROCHLORIC-ACID INCORPORATION

Liquid phase deposition of silicon dioxide (LPD-SiO2) provides the adv antages of room temperature growth, good step coverage and selective g rowth, and has high potential in integrated circuit fabrications. In t his paper, a simple method to improve the quality of LPD-SiO2 was deve loped with the incorporation of hydrochloric acid (HCl) which can enha nce the deposition rate of LPD-SiO2. From the current-voltage and capa citance-voltage characteristics, the hat-hand voltage and leakage curr ent were improved by HCl incorporation into LPD-SiO2 films.