RADICAL REARRANGEMENTS FOR THE CHEMICAL-VAPOR-DEPOSITION OF DIAMOND

A combination of chemical trapping and computations is used to determi ne the activation parameters far the interconversion of the 3-methylen ebicyclo[3.3.1]nonan-7-yl (1), (3-noradamantyl)methyl (2), and 1-adama ntyl (3) radicals. The three radicals model proposed intermediate surf ace radical structures in the chemical vapor deposition (CVD) of diamo nd on its 2 x 1 reconstructed [100] surface. The study finds that rela tively low-level calculations previously applied to the problem of dia mond growth are reliable, at least qualitatively.