PREPARATION OF HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors
HURAN J SAFRANKOVA J KOBZEV AP
Citation
J. Huran et al., PREPARATION OF HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Vacuum, 50(1-2), 1998, pp. 103-105
Citations number
5
Categorie Soggetti
Physics, Applied","Material Science
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
50
Issue
1-2
Year of publication
1998
Pages
103 - 105
Database
ISI
SICI code
0042-207X(1998)50:1-2<103:POHACT>2.0.ZU;2-5
Abstract
Thin silicon carbide (SiC) films were prepared by plasma enhanced chem ical vapour deposition (PECVD). The structural properties of SiC films were investigated by IR, RES, and ERD measurement techniques. The res ults showed that the films contain the typical features found in hydro genated amorphous SIG. The I-U measurements were used to electrical ch aracterization of Au Schottky contacts prepared on SiC surfaces. (C) 1 998 Elsevier Science Ltd. All rights reserved.