STUDY OF THE NATURE OF LIGHT-HOLE EXCITONIC TRANSITIONS IN INGAAS GAAS QUANTUM-WELL/

Authors
SEK G MISIEWICZ J RADZIEWICZ D TLACZALA M PANEK M KORBUTOWICZ R
Citation
G. Sek et al., STUDY OF THE NATURE OF LIGHT-HOLE EXCITONIC TRANSITIONS IN INGAAS GAAS QUANTUM-WELL/, Vacuum, 50(1-2), 1998, pp. 199-201
Citations number
12
Categorie Soggetti
Physics, Applied","Material Science
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
50
Issue
1-2
Year of publication
1998
Pages
199 - 201
Database
ISI
SICI code
0042-207X(1998)50:1-2<199:SOTNOL>2.0.ZU;2-4
Abstract
Photoreflectance (PR) spectra of strained InGaAs/GaAs MQWs were measur ed. Heavy and light hole excitonic transitions were observed. Applying results of theoretical calculations which include excitonic and strai n effects, we obtained that the existence of type II light hole excito n in our type I MOW system should be considered. (C) 1998 Elsevier Sci ence Ltd. All rights reserved.