GROWTH AND CHARACTERIZATION OF GAN EPITAXIAL LAYERS

Layers of monocrystalline GaN were grown at different temperatures by atmospheric pressure metalorganic chemical vapour deposition (MOCVD) m ethod on the sapphire substrates. The high quality of the layers was c onfirmed by X-ray diffraction and photoluminescence spectra measuremen ts. For comparison purposes, simultaneous growth on a-plane and c-plan e sapphire substrates was performed for each of the experiments. The G aN layers grown on either a-plane or c-plane sapphire were oriented wi th the GaN c-plane (0001) parallel to the substrate. The 325 nm line o f He-Cd laser was used as an excitation source for photoluminescence e xperiments. Photoluminescence spectra showed near band peaks and broad yellow band emission at 77 K. (C) 1998 Elsevier Science Ltd. All righ ts reserved.