ARTIFICIAL NEURAL-NETWORK PREDICTION OF THE BAND-GAP AND MELTING-POINT OF BINARY AND TERNARY COMPOUND SEMICONDUCTORS

Authors
ZHANG ZC PENG RW CHEN NY
Citation
Zc. Zhang et al., ARTIFICIAL NEURAL-NETWORK PREDICTION OF THE BAND-GAP AND MELTING-POINT OF BINARY AND TERNARY COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 54(3), 1998, pp. 149-152
Citations number
18
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
54
Issue
3
Year of publication
1998
Pages
149 - 152
Database
ISI
SICI code
0921-5107(1998)54:3<149:ANPOTB>2.0.ZU;2-0
Abstract
In this paper, an artificial neural network trained by experimental da ta has been used to predict the values of the band gap and melting poi nt of III-V, II-VI binary and I-III-VI2, II-IV-V-2 ternary compound se miconductors. The calculated results were in good agreement with the e xperimental ones. (C) 1998 Elsevier Science S.A. All rights reserved.