Zc. Zhang et al., ARTIFICIAL NEURAL-NETWORK PREDICTION OF THE BAND-GAP AND MELTING-POINT OF BINARY AND TERNARY COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 54(3), 1998, pp. 149-152
In this paper, an artificial neural network trained by experimental da
ta has been used to predict the values of the band gap and melting poi
nt of III-V, II-VI binary and I-III-VI2, II-IV-V-2 ternary compound se
miconductors. The calculated results were in good agreement with the e
xperimental ones. (C) 1998 Elsevier Science S.A. All rights reserved.