WET RAPID THERMAL-OXIDATION OF SILICON WITH A PYROGENIC SYSTEM

A pyrogenic steam generator is implemented in a conventional AST SHS28 00 epsilon RTP system to produce H2O gas ambient for oxide growth enha ncement in a Wet Rapid Thermal Oxidation process (WRTO). For similar t hermal budgets of wet and dry oxidation, the growth rate is several ti mes higher for the wet process. The temperature sensitivity (unit: Ang strom/K) of the process changes strongly with the grown oxide thicknes s. The influence of H2O:O-2 proportion in the process gas on final oxi de thickness is also determined and leads to a definition of a 'wet' p rocess. Isothermal and isochronal thickness data are summarized for th e wet oxidation process. All results are analysed with the theoretical growth model of Deal and Grove [1] and compared to previous results w ith conventional furnace technology. Electrical breakdown propel ties of the various oxides grown on epitaxial wafers with an average thickn ess of 140 Angstrom are presented. (C) 1998 Elsevier Science S.A. All rights reserved.