GROWTH OF GALLIUM-PHOSPHIDE LAYERS BY CHEMICAL BEAM EPITAXY ON OXIDE PATTERNED (001)SILICON SUBSTRATES

GaP layers grown by chemical beam epitaxy in [110] channels fabricated on oxide-patterned (001)silicon substrates have been examined in cros s-section by conventional and high resolution transmission electron mi croscopy. Results indicate that the layers are single crystalline. For the imaging conditions used, [110] cross-sectional micrographs show t hat growths in contact with the oxide exhibit twinning on one edge-on variant, whereas faults or twins are observed on two such variants in the layers which nucleate on the silicon substrate. Arguments for rati onalizing these observations are developed, and their implications to improve the quality of the layer by confining faults or twins by the o xide sidewall are discussed. (C) 1998 Elsevier Science S.A. All rights reserved.