Citation
Yk. Seng et Ss. Rofail, 1.5V HIGH-SPEED ELECTROSTATIC DISCHARGE FREE BICMOS DIGITAL CIRCUIT, Electronics Letters, 34(13), 1998, pp. 1306-1307
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
34
Issue
13
Year of publication
1998
Pages
1306 - 1307
Database
ISI
SICI code
0013-5194(1998)34:13<1306:1HEDFB>2.0.ZU;2-G
Abstract
A novel circuit design that effectively eliminates the need for input
protection circuits is described. Besides having an excellent electros
tatic discharge (ESD) robustness, the simulation results have shown th
at this design outperforms current BiCMOS circuits in terms of speed,
power, crossover capacitance, and chip area for a wide range of load c
apacitances, power supply voltages and technologies. The proposed circ
uit remains functional after an ESD test.