IMPROVEMENT OF GAN-BASED LASER-DIODE FACETS BY FIB POLISHING

Authors
MACK MP VIA GD ABARE AC HANSEN M KOZODOY P KELLER S SPECK JS MISHRA UK COLDREN LA DENBAARS SP
Citation
Mp. Mack et al., IMPROVEMENT OF GAN-BASED LASER-DIODE FACETS BY FIB POLISHING, Electronics Letters, 34(13), 1998, pp. 1315-1316
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
13
Year of publication
1998
Pages
1315 - 1316
Database
ISI
SICI code
0013-5194(1998)34:13<1315:IOGLFB>2.0.ZU;2-O
Abstract
420 nm metal organic chemical vapour deposition-grown laser diodes wer e fabricated using Cl-2 reactive ion etching to form the Facet mirrors . The diodes were subsequently tested under pulsed conditions before a nd after focused ion beam (FIB) polishing. I-th was reduced from 1.75 to 1.08A and the differential quantum efficiency (eta(d)) increased fr om 1.3% to 2.5% after FIB.