EFFICIENT 2ND-HARMONIC POWER EXTRACTION FROM GAAS TUNNETT DIODES ABOVE 200GHZ

Authors
EISELE H
Citation
H. Eisele, EFFICIENT 2ND-HARMONIC POWER EXTRACTION FROM GAAS TUNNETT DIODES ABOVE 200GHZ, Electronics Letters, 34(13), 1998, pp. 1324-1326
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
13
Year of publication
1998
Pages
1324 - 1326
Database
ISI
SICI code
0013-5194(1998)34:13<1324:E2PEFG>2.0.ZU;2-F
Abstract
GaAs TUNNETT diodes on diamond heat sinks yielded state-of-the-art RF power levels of 9 and > 4mW with corresponding DC-to-RF conversion eff iciencies of > 1.0 and > 0.6% in a second-harmonic mode at 209 and 235 GHz, respectively. The phase noise was well below -94dBc/Hz at a carri er frequency of 500kHz. Simulations revealed a varactor-like mode of o peration.