A novel emitter switched thyristor (EST) structure with a diode divert
er is introduced to obtain superior current saturation characteristics
with an excellent forward bias safe operating area, without compromis
ing the on-state voltage drop. The new structure consists of a diode d
iverter connected to the p-base region of the DC-EST. The saturation c
urrent density is lowered significantly, which is desirable to achieve
a good saturation current safe operating area. Experimental results a
re reported to confirm the superior characteristics observed through s
imulations.