ELECTRICAL-RESISTIVITY OF EU-RICH EUO THIN-FILMS

The electrical resistivity of Eu-rich EuO thin films was studied at te mperatures 5 less than or equal to T less than or equal to 150 K and m agnetic fields 0 less than or equal to H less than or equal to 5T. We prepared two films with different degrees of off-stoichiometry using t he method described previously. [Jpn. J. Appl. Phys. 35 (1996) 6052] T he film richer in Eu exhibited an increase in Curie temperature of the bulk value of 70 K to approximately 150 K, and zero-field resistivity decreased from about 100 mu Ohm.m at 100 K to 5 mu Ohm.m at 20 K. The Nm's magnetoresistance exceeded -80% in the 80-90 K temperature range . These results show that the stable reproduction of EuO films with hi gh levels of conductivity without the addition of a third element is n ow possible.