A 25-NM-PITCH GAINAS INP BURIED STRUCTURE USING CALIXARENE RESIST/

To realize a fine periodical pattern by electron beam lithography, a s tady for using calixarene as a resist was carried out. A 25-nm-pitch r esist pattern was fabricated and transferred to a thin InP layer by tw o-step wet chemical etching. Precise slight O-2 ashing, to eliminate r esidual matter was essential to transfer the pattern by wet etching. T he controllability of the width was improved when using calixarene, wh en the period was 40 nm. Furthermore, a 25-nm-pitch InP pattern was bu ried in a GaInAs structure by organometallic vapor phase epitaxy. This technology could be applied to realize electron wave-devices.