LOCAL TUNNELING BARRIER HEIGHT ON SI(111) RECONSTRUCTED SURFACES

We observed local tunneling barrier height images on reconstructed Si( 111) surfaces. Local tunneling barrier height on root 3 x root 3 recon structed structure was almost the same as that of 7 x 7 structure. In contrast, local tunneling barrier height on the c(4 x 2) reconstructed structure was lower than that on the 7 x 7 structure. Both reconstruc ted structures were induced by transition metal-atom adsorption. This is influence of three-dimensional spatial distribution of surface wave function. We also found that local tunneling barrier height on the ri ng cluster structure was lower than that on 7 x 7 structure.