WINDOW RESONANCE IN PHOTODETACHMENT OF THE NEGATIVE SILICON ION - STRONG INTERACTION OF THE 3P CONTINUUM WITH THE 3S-]3P SHAPE RESONANCE

Authors
BALLING P KRISTENSEN P STAPELFELDT H ANDERSEN T HAUGEN HK
Citation
P. Balling et al., WINDOW RESONANCE IN PHOTODETACHMENT OF THE NEGATIVE SILICON ION - STRONG INTERACTION OF THE 3P CONTINUUM WITH THE 3S-]3P SHAPE RESONANCE, Journal of physics. B, Atomic molecular and optical physics, 26(20), 1993, pp. 3531-3539
Citations number
20
Categorie Soggetti
Physics, Atomic, Molecular & Chemical",Optics
Journal title
Journal of physics. B, Atomic molecular and optical physics → ACNP
ISSN journal
09534075
Volume
26
Issue
20
Year of publication
1993
Pages
3531 - 3539
Database
ISI
SICI code
0953-4075(1993)26:20<3531:WRIPOT>2.0.ZU;2-R
Abstract
Photodetachment cross section measurements have been performed on the Si-(3s(2)3p(3) S-4) ion using a pulsed dye laser and non-linear optica l techniques in the photon energy region close to the 3s threshold. A deep window resonance observed at a photon energy of 5.2 eV is a clear manifestation of electron correlation resulting from the interaction of the 3p-->epsilon s, epsilon d continua with the 3s(2)3p(3)-->3s3p(4 ) autodetaching resonance. The experimental resonance parameters are c ompared with theoretical predictions.