EFFECTS OF SUBSTRATE ON THE GROWTH-CHARACTERISTICS OF SILICON-OXIDE FILMS DEPOSITED BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION USINGSI(OC2H5)(4) AND O-3

The growth characteristics of silicon oxide film deposited by atmosphe ric pressure chemical vapor deposition using tetraethylorthosilicate a nd ozone were studied focusing on substrate dependence. We found that Si-OH and Si-O-C2H5 bonds on substrates act as tetraethylorthosilicate adsorption sites, and adsorption site density drastically affects fil m growth characteristics. Films show a rough surface and flowlike step coverage on substrates with low-density adsorption sites. On substrat es with high-density adsorption sites, however; films show a smooth su rface and conformal step coverage. Tetraethylorthosilicate adsorption sites on the substrate surface must be controlled to obtain the desire d film growth characteristics.