Mj. Loboda et al., PROPERTIES OF A-SIOX-H THIN-FILMS DEPOSITED FROM HYDROGEN SILSESQUIOXANE RESINS, Journal of the Electrochemical Society, 145(8), 1998, pp. 2861-2866
Citations number
17
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Ultralarge sale integrated circuit designs require multiple metal wiri
ng layers for the formation of the device interconnections. Surface pl
anarization and the deposition of high quality insulating films are cr
itical fabrication steps related to the manufacture of these circuits.
Planarization and dielectric deposition can be accomplished simultane
ously using a spin-on process with hydrogen silsesquioxane (HSQ) resin
to deposit amorphous SiO:H dielectric films. The use of this material
in device manufacturing has increased as a result of the material's g
ood planarization properties, eliminating the need for etchback proced
ures. More recently, it has been observed that HSQ-based films also pr
ovide the added benefit of relative permittivity less than SiO2, which
helps to minimize electrical delay In order to obtain optimum propert
ies from this material, tight process control and knowledge of the mat
erial's chemical behavior are necessary. Studies of the precursor mate
rial, film formation, and film properties have been performed. Also it
is found that structural and compositional changes in the precursor d
uring the film forming process play an important role in establishing
the beneficial properties observed in HSQ-based dielectric films.