SUBPARABOLIC OXIDATION BEHAVIOR OF SILICON-CARBIDE AT 1300-DEGREES-C

Authors
OGBUJI LUJT
Citation
Lujt. Ogbuji, SUBPARABOLIC OXIDATION BEHAVIOR OF SILICON-CARBIDE AT 1300-DEGREES-C, Journal of the Electrochemical Society, 145(8), 1998, pp. 2876-2882
Citations number
26
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
8
Year of publication
1998
Pages
2876 - 2882
Database
ISI
SICI code
0013-4651(1998)145:8<2876:SOBOSA>2.0.ZU;2-Z
Abstract
The phenomenon of subparabolic oxide growth rate, more the rule than t he exception in the oxidation of silica formers, is examined in light of data sets acquired in SiC oxidation experiments at 1300 degrees C. Negative deviation from parabolic kinetics is shown to correlate with oxide crystallinity. The data sets were analyzed to ascertain the pred ominant and contributing growth laws, and tested with models that desc ribe the overall kinetics as combinations of the familiar growth laws.