OXYGEN DIFFUSION IN SINGLE-CRYSTAL IN2O3 AND TIN-DOPED IN2O3

Single-crystal In2O3 and Sn-In2O3 (2.6% Sn) were grown by the flux met hod for use in an oxygen diffusion experiment. Diffusion profiles with in the crystals were analyzed by secondary ion mass spectrometry. The concentration profile of O-18 in the solids could be explained very we ll by application of Fick's law The oxygen diffusion coefficients in S n-In2O3 were higher than those in In2O3. However, the apparent activat ion energy for oxygen diffusion in Sn-In2O3 was smaller than that in I n2O3, probably due to the occurrence of a nonstoichiometric reaction i n this oxide. Oxygen diffusion in single-crystal In2O3 was slower than that reported for polycrystalline In2O3, although the activation ener gy was similar for both materials.