ATOMIC LAYER EPITAXY GROWTH OF TIN THIN-FILMS FROM TII4 AND NH3

TiN thin films were grown by atomic layer epitaxy using titanium tetra iodide (TiI4) and ammonia (NH3) as precursors. The films were characte rized with Rutherford backscattering spectrometry, time-of-flight elas tic recoil detection analysis, energy dispersive X-ray spectroscopy, X -ray diffraction: scanning electron microscopy, and resistivity measur ements. Both the growth rate and Trim quality were markedly dependent on the growth temperature. As the temperature was increased from 400 t o 500 degrees C the growth rate increased from 0.12 to 0.30 Angstrom/c ycle, and the resistivity decreased from 380 to 70 mu Ohm cm. Also, th e oxygen content decreased with increasing temperature being about 10 atom % in the films grown at 475 to 500 degrees C. The iodine contents were below 0.5 atom %.