ATOMIC LAYER EPITAXY OF COPPER - GROWTH AND SELECTIVITY IN THE CU(II)-2,2,6,6-TETRAMETHYL-3,5-HEPTANEDIONATE H-2 PROCESS/

The deposition of copper by means of atomic layer epitaxy is reported. Using Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate as the precursor, pure and specular copper films were deposited at deposition temperatu res below 200 degrees C. This is more than 150 degrees C lower than in previous reports for the same precursor where chemical vapor depositi on has been employed. The process was self-limited in the temperature range 190 to 260 degrees C. Area-selective deposition was achieved on platinum seeded substrates vs. unseeded. glass slides or oxidized meta l surfaces in the temperature range 175 to 300 degrees C. At higher te mperatures, the selectivity was lost, and nucleation was independent o f substrate material because of a thermal decomposition of the precurs or.