WET CHEMICAL ETCHING FOR V-GROOVES INTO INP SUBSTRATES

Authors
WANG J THOMPSON DK SIMMONS JG
Citation
J. Wang et al., WET CHEMICAL ETCHING FOR V-GROOVES INTO INP SUBSTRATES, Journal of the Electrochemical Society, 145(8), 1998, pp. 2931-2937
Citations number
38
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
8
Year of publication
1998
Pages
2931 - 2937
Database
ISI
SICI code
0013-4651(1998)145:8<2931:WCEFVI>2.0.ZU;2-6
Abstract
A systematic study has been performed on the production of V-grooves i n (100) InP substrates by wet chemical etching. The dissolution proces s and its dependence on etchant, etch mask, and its accuracy of alignm ent relative to the [011] or [0 (1) over bar 1] directions has been an alyzed. Consequently, the conditions necessary to achieve V-grooves ha ving (111)A, (111)B, and (211)A sidewalls has been established.