ELECTRICAL CHARACTERIZATION OF THIN SIO2-FILMS ON SILICON CREATED BY ANODIC OXYGEN CORONA DISCHARGE PROCESSING

A negative-point (anodic) corona discharge is used to grow thin SiO2 f ilms at low temperatures (600-800 degrees C), at dramatically enhanced oxidation rates. Electrical tests show that oxide and interface charg es are comparable to thermal oxides. Breakdown characteristics are pro mising. The boundary between the corona-processed and control regions is found to be severely compromised. Subsequent corona treatments whic h overlap such boundary regions are found to restore the quality of th e oxide. These results are consistent with those of Fourier transform infrared spectroscopy, which show that the corona-treated region of an SiO2 film has a different structure from thermal oxides.