ELECTRICAL CHARACTERIZATION OF THIN SIO2-FILMS ON SILICON CREATED BY ANODIC OXYGEN CORONA DISCHARGE PROCESSING

Citation
Sm. Sayedi et al., ELECTRICAL CHARACTERIZATION OF THIN SIO2-FILMS ON SILICON CREATED BY ANODIC OXYGEN CORONA DISCHARGE PROCESSING, Journal of the Electrochemical Society, 145(8), 1998, pp. 2937-2943
Citations number
33
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
ISSN journal
00134651
Volume
145
Issue
8
Year of publication
1998
Pages
2937 - 2943
Database
ISI
SICI code
0013-4651(1998)145:8<2937:ECOTSO>2.0.ZU;2-P
Abstract
A negative-point (anodic) corona discharge is used to grow thin SiO2 f ilms at low temperatures (600-800 degrees C), at dramatically enhanced oxidation rates. Electrical tests show that oxide and interface charg es are comparable to thermal oxides. Breakdown characteristics are pro mising. The boundary between the corona-processed and control regions is found to be severely compromised. Subsequent corona treatments whic h overlap such boundary regions are found to restore the quality of th e oxide. These results are consistent with those of Fourier transform infrared spectroscopy, which show that the corona-treated region of an SiO2 film has a different structure from thermal oxides.