ELECTRONIC BAND-STRUCTURE OF THE 2-DIMENSIONAL SURFACE-STATE BANDS OFTHE (1X1) AND (1X2) PHASES OF BI GASB(110)/

Citation
Dn. Mcilroy et al., ELECTRONIC BAND-STRUCTURE OF THE 2-DIMENSIONAL SURFACE-STATE BANDS OFTHE (1X1) AND (1X2) PHASES OF BI GASB(110)/, Physical review. B, Condensed matter, 48(16), 1993, pp. 11897-11904
Citations number
29
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
16
Year of publication
1993
Pages
11897 - 11904
Database
ISI
SICI code
0163-1829(1993)48:16<11897:EBOT2S>2.0.ZU;2-R
Abstract
The surface-state bands of the (1 X 1) and (1 X 2) phases of Bi/GaSb(1 10) have been probed using angle-resolved ultraviolet photoemission sp ectroscopy with synchrotron radiation. Four Bi-induced surface-state b ands have been identified for both the (1 X 1) and the (1 X 2) phases. The bands with the lowest binding energies (S(I) and S(II)) have been attributed to intrachain bonding in the Bi overlayer and the higher-b inding-energy bands (S(III) and S(IV)) to overlayer states involved in the back bonding of the overlayer to the substrate. Based on initial- state dispersion measurements, we conclude that the Bi chains in the e pitaxial overlayer remain intact throughout the phase transition. We p ropose a model for the overlayer structure of the (1 X 2) phase of Bi/ GaSb(110).