SOLITARY-WAVE DYNAMICS IN EXTRINSIC SEMICONDUCTORS UNDER DC VOLTAGE BIAS

Citation
Ir. Cantalapiedra et al., SOLITARY-WAVE DYNAMICS IN EXTRINSIC SEMICONDUCTORS UNDER DC VOLTAGE BIAS, Physical review. B, Condensed matter, 48(16), 1993, pp. 12278-12281
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
48
Issue
16
Year of publication
1993
Pages
12278 - 12281
Database
ISI
SICI code
0163-1829(1993)48:16<12278:SDIESU>2.0.ZU;2-Y
Abstract
Numerical-simulation results are presented for a simple drift-diffusio n model which describes time-dependent and nonlinear electrical transp ort properties of extrinsic semiconductors under time-independent (dc) voltage bias. Simulations for finite-length samples with Ohmic bounda ry conditions yield dynamically stable solitary space-charge waves tha t travel periodically across the sample. Numerical estimates of wave s peed, the wave size, and onset phenomena are in excellent agreement wi th recent experiments in p-type germanium.