ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS GAXAL1-XAS SUPERLATTICES/

Authors
ZHANG YH JIANG DS LI F WU RH ZHOU JM MEI XB
Citation
Yh. Zhang et al., ELECTRIC-FIELD-INDUCED EXCITON-LINEWIDTH BROADENING IN SHORT-PERIOD GAAS GAXAL1-XAS SUPERLATTICES/, Physical review. B, Condensed matter, 48(16), 1993, pp. 12296-12299
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
48
Issue
16
Year of publication
1993
Pages
12296 - 12299
Database
ISI
SICI code
0163-1829(1993)48:16<12296:EEBISG>2.0.ZU;2-4
Abstract
We have investigated the Wannier-Stark effect in GaAs/GaAl1-xAs superl attices under electric fields by photocurrent spectroscopy measurement s in the range of temperatures 10-300 K. The linewidth of the Oh Stark -ladder exciton was found to increase significantly along with an incr ease in peak intensity when the electric field increases. We present a mechanism based on an enhanced interface roughness scattering of elec tronic states due to Wannier-Stark localization in order to explain th is increased broadening with electric field. This electric-field-relat ed scattering mechanism will weaken the negative differential conducta nce effects in superlattices predicted by Esaki and Tsu.