HIGH-SPEED GAN GROWTH AND COMPOSITIONAL CONTROL OF GAN-ALGAN SUPERLATTICE QUASI-TERNARY COMPOUNDS BY RF-RADICAL SOURCE MOLECULAR-BEAM EPITAXY

Novel growth technologies of III-nitrides for fabricating optical devi ces by molecular beam epitaxy using RF-plasma excited nitrogen (RF-MBE ) were investigated. A relatively high-growth rate, up to 1.4 mu m/h o f GaN with high-electrical and high-optical quality was obtained, The concept of AlGaN quasiternary (QT) compounds, consisting of GaN-AlGaN short period superlattice, was demonstrated and the Al composition was controlled with a shutter control method in the range of 0-0.47. Usin g the QT technology, a GaN-Al0.07Ga0.93N-Al0.3Ga0.7N multiquantum-well heterostructure was fabricated to show the effectiveness of the metho d.