FABRICATION OF NICKEL DOTS USING SELECTIVE ELECTROLESS DEPOSITION ON SILICON-WAFER

Citation
T. Osaka et al., FABRICATION OF NICKEL DOTS USING SELECTIVE ELECTROLESS DEPOSITION ON SILICON-WAFER, Chemistry Letters, (7), 1998, pp. 657-658
Citations number
9
Categorie Soggetti
Chemistry
Journal title
ISSN journal
03667022
Issue
7
Year of publication
1998
Pages
657 - 658
Database
ISI
SICI code
0366-7022(1998):7<657:FONDUS>2.0.ZU;2-E
Abstract
The selective deposition of nickel on n-Si(100) wafer in aqueous solut ion was investigated. It was confirmed by cross-sectional FE-TEM exami nation that the deposition of nickel occurred from a solution of nicke l ions prepared by excluding the hypophosphite reducing agent from the conventional electroless nickel plating bath, and that this depositio n reaction accompanied the formation of SiO2. This finding shows that the electrons needed to reduce the nickel ions to the metal are suppli ed directly from the Si wafer. By utilizing this galvanic displacement reaction, nickel metal in the form of minute dots measuring 1 mu m in diameter was selectively deposited using a silicon oxide layer as the resist in combination with a two-step process, which consisted of the first step of immersing a Si wafer into a solution containing nickel ions but no reducing agent to form nuclei of nickel metal, and the sec ond step of immersing the wafer with the nuclei into a conventional el ectroless nickel plating bath to cause the growth of the nuclei to the desired size.