RECOMBINATION CHARGE LOSSES IN SILICON DETECTORS OF HEAVY-IONS

A comparative analysis of the contributions of two different mechanism s to the recombination charge losses in surface-barrier detectors of h eavy ions was carried out. One of the mechanisms is related to the sur face recombination of nonequilibrium current carriers, and the other i s based on the recombination of nonequilibrium carriers in the system of primary non-steady-state defects, which are produced in a single-io n track. It is shown that the second mechanism of charge losses leads to a significant overestimation of the effect. For the surface-barrier detectors, the surface-recombination mechanism is the main contributo r. This is confirmed by the observed angular dependences of losses, fo r which it is difficult to find an explanation on the basis of the sec ond model.