REACTIVE THERMIONIC DEPOSITION OF THIN-FILMS

A technique of thin-film deposition from plasma of metal vapors and ch emically active gases is described. The metal-vapor plasma is generate d by a non-self-maintained are discharge from a vaporized anode. The r eactive gas (N-2, O-2, CO2, or CH4) is introduced into the working vol ume before the discharge in anode-material vapors is ignited. The effe ct of the gas pressure on the current-voltage characteristics and floa ting plasma potential at the substrate site is studied. The fields of application of the developed technology are indicated.