Sd. Dibhajj et al., NAN, A NOVEL VOLTAGE-GATED NA CHANNEL, IS EXPRESSED PREFERENTIALLY INPERIPHERAL SENSORY NEURONS AND DOWN-REGULATED AFTER AXOTOMY, Proceedings of the National Academy of Sciences of the United Statesof America, 95(15), 1998, pp. 8963-8968
Although physiological and pharmacological evidence suggests the prese
nce of multiple tetrodotoxin-resistant (TTS-R) Na channels in neurons
of peripheral nervous system ganglia, only one, SNS/PN3, has been iden
tified in these cells to date. we have identified and sequenced a nove
l Na channel cu-subunit (NaN), predicted to be TTX-R and voltage-gated
, that is expressed preferentially in sensory neurons within dorsal ro
ot ganglia (DRG) and trigeminal ganglia, The predicted amino acid sequ
ence of NaN can be aligned with the predicted structure of known Na ch
annel alpha-subunits; all relevant landmark sequences, including posit
ively charged S4 and pore-lining SS1-SS2 segments, and the inactivatio
n tripeptide IFM, are present at predicted positions. However, NaN exh
ibits only 42-53% similarity to other mammalian Na channels, including
SNS/PN3, indicating that it is a novel channel, and suggesting that i
t mag represent a third subfamily of Na channels. NaN transcript level
s are reduced significantly 7 days post axotomy in DRG neurons, consis
tent with previous findings of a reduction in TTX-R Na currents. The p
referential expression of NaN in DRG and trigeminal ganglia and the re
duction of NaN mRNA levels in DRG after axonal injury suggest that NaN
, together with SNS/PN3, may produce TTX-R currents in peripheral sens
ory neurons and may influence the generation of electrical activity in
these cells.