HIGH-VOLTAGE OPERATION OF SILICON DEVICES FOR LHC EXPERIMENTS

Authors
BACCHETTA N BISELLO D CANDELORI A CAVONE M DALLABETTA GF DAROLD M DELISO G DELLORSO R FUOCHI PG MESSINEO A MIHUL A MILITARU O PACCAGNELLA A TONELLI G VERDINI PG VERZELLESI G WHEADON R
Citation
N. Bacchetta et al., HIGH-VOLTAGE OPERATION OF SILICON DEVICES FOR LHC EXPERIMENTS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 139-141
Citations number
4
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
409
Issue
1-3
Year of publication
1998
Pages
139 - 141
Database
ISI
SICI code
0168-9002(1998)409:1-3<139:HOOSDF>2.0.ZU;2-N
Abstract
High-voltage operation can be a solution to obtain full charge collect ion in strongly irradiated silicon detectors. The maximum bias voltage which can be applied is limited by the breakdown point of the junctio n. We show how multiguard structures can enhance the breakdown voltage in p(+)-n silicon devices designed for applications in the LHC enviro nment. (C) 1998 Elsevier Science B.V. All rights reserved.