SIMULATION AND DESIGN OF VARIOUS CONFIGURATIONS OF SILICON DETECTORS FOR HIGH IRRADIATION TOLERANCE UP TO 6 X 10(14) N CM(2) IN LHC APPLICATION/

Various new configurations (n(+)/p/p(+), n(+)/n/p(+) and p(+)/n/n(+)) of silicon detector designs have been simulated using processing and d evice simulation tools, before and after irradiation to various fluenc es. The aim of material selection and detector design is to ensure ade quate charge collection after being irradiated up to 10(15) n/cm(2) (o r 6 x 10(14) pi/cm(2)) in LHC environment, which corresponds to a net increase (with long-term anneal) of space charge of 7 x 10(13) cm(-3). Starting materials selected for simulations include high resistivity p-type silicon, medium and low resistivity n-type silicon. Design of m ulti-guard-rings structure fur high-voltage operation is also consider ed. First, irradiation data of low resistivity silicon detector is pre sented. (C) 1998 Elsevier Science B.V. All rights reserved.