SINGLE-SIDED P(-SIDED SILICON STRIP DETECTORS EXPOSED TO FLUENCES UP TO 2 X 10(14)()N AND DOUBLE)CM(2) 24 GEV PROTONS/

Authors
ANDRICEK L GEBHART T HAUFF D KEMMER J KOFFEMAN E LUTZ G RICHTER RH ROHE T WUNSTORI R
Citation
L. Andricek et al., SINGLE-SIDED P(-SIDED SILICON STRIP DETECTORS EXPOSED TO FLUENCES UP TO 2 X 10(14)()N AND DOUBLE)CM(2) 24 GEV PROTONS/, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 184-193
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
409
Issue
1-3
Year of publication
1998
Pages
184 - 193
Database
ISI
SICI code
0168-9002(1998)409:1-3<184:SPSSDE>2.0.ZU;2-Z
Abstract
Single-sided p(+)n and double-sided detectors have been designed for s urviving the drastic changes of material properties expected from thei r use in the harsh radiation environment at the LHC. Detectors optimiz ed for capacitive charge division readout have been exposed to a fluen ce of 2x10(14)/cm(2) 24GeV protons. Their principal design characteris tics and properties after irradiation are described. An explanation fo r the hitherto not understood survival of single-sided pin detectors i s given. First results with single-sided pin detectors optimized for b inary readout are presented. (C) 1998 Elsevier Science B.V. All rights reserved.