CORRELATION BETWEEN A DEEP HOLE TRAP AND THE REVERSE ANNEALING EFFECTIN NEUTRON-IRRADIATED SILICON DETECTORS

Authors
MOLL M FEICK H FRETWURST E LINDSTROM G
Citation
M. Moll et al., CORRELATION BETWEEN A DEEP HOLE TRAP AND THE REVERSE ANNEALING EFFECTIN NEUTRON-IRRADIATED SILICON DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 194-197
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
409
Issue
1-3
Year of publication
1998
Pages
194 - 197
Database
ISI
SICI code
0168-9002(1998)409:1-3<194:CBADHT>2.0.ZU;2-U
Abstract
We report on a correlation between a deep hole trap observed by TSC (T hermally Stimulated Current) and the so-called reverse annealing effec t of the effective doping concentration in neutron-irradiated silicon detectors. (C) 1998 Elsevier Science B.V. All rights reserved.