PARTICLE DETECTOR BASED ON GAAS - RADIATION HARDNESS AND SPATIAL-RESOLUTION

Some GaAs properties are presented in comparison with Si. Tomsk techno logy has proposed non-traditional way of a sensitive layer creation. A s a result the radiation hardness of these detectors is up to 10(15) n /cm(2) at a neutron fluence and up to 2 x 10(14) p/cm(2) at a proton f luence. Due to a high concentration of impurity, the detector is capab le of collecting a charge by itself without external bias. A previous beam rest results of GaAs 50 mu m pitch microstrip detector prototype were reconsidered from the spatial resolution aspect. The proposal was to try a new topology: a 25 mu m pitch strips tied in pairs. In relat ion to readout and analysis it resembles a 50 mu m microstrip detector . A preliminary simulation has shown similar to 9 mu m resolution inst ead of 14.4 mu m. (C) 1998 Elsevier Science B.V. All rights reserved.