HIGH-TEMPERATURE PHASE AND MORPHOLOGICAL-CHANGES OF CVD-SIC FILMS STUDIED USING IN-SITU X-RAY-DIFFRACTOMETRY

Authors
KINGETSU T ITO K TAKEHARA M
Citation
T. Kingetsu et al., HIGH-TEMPERATURE PHASE AND MORPHOLOGICAL-CHANGES OF CVD-SIC FILMS STUDIED USING IN-SITU X-RAY-DIFFRACTOMETRY, Materials letters, 36(5-6), 1998, pp. 284-289
Citations number
8
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
36
Issue
5-6
Year of publication
1998
Pages
284 - 289
Database
ISI
SICI code
0167-577X(1998)36:5-6<284:HPAMOC>2.0.ZU;2-O
Abstract
Phase and morphological changes of polycrystalline, chemical-vapor-dep osited beta-SiC films on graphite at temperatures up to 2500 degrees C were investigated by in situ X-ray diffractometry (XRD). It was demon strated that MID using imaging plate was useful for monitoring the cha nges: the beta-SIC transformed into alpha-SiC at 2200 degrees C and th en decomposed and were sublimated to develop protruding dendrite struc tures of beta-SiC on the surface because of temperature gradient there . (C) 1998 Elsevier Science B.V. All rights reserved.