W. Wesch et al., HIGH-DOSE MEV OXYGEN-ION IMPLANTATION INTO SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 160-163
By high-dose MeV oxygen implantation into 6H-SiC bulk crystals at temp
eratures between 650 degrees C and 700 degrees C buried SiC-SiOx layer
s were produced. In the infrared and visible region these layers exhib
it a refractive index which is significantly reduced with respect to t
he virgin SIC making them useable as cladding layers for SIC waveguide
s. For the first time waveguiding at lambda = 633 nm was demonstrated
after annealing such an ion implanted SiC-SiO, layer system. (C) 1998
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