HIGH-DOSE MEV OXYGEN-ION IMPLANTATION INTO SIC

Authors
WESCH W HEFT A HOBERT H PEITER G WENDLER E BACHMANN T
Citation
W. Wesch et al., HIGH-DOSE MEV OXYGEN-ION IMPLANTATION INTO SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 160-163
Citations number
13
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
141
Issue
1-4
Year of publication
1998
Pages
160 - 163
Database
ISI
SICI code
0168-583X(1998)141:1-4<160:HMOIIS>2.0.ZU;2-8
Abstract
By high-dose MeV oxygen implantation into 6H-SiC bulk crystals at temp eratures between 650 degrees C and 700 degrees C buried SiC-SiOx layer s were produced. In the infrared and visible region these layers exhib it a refractive index which is significantly reduced with respect to t he virgin SIC making them useable as cladding layers for SIC waveguide s. For the first time waveguiding at lambda = 633 nm was demonstrated after annealing such an ion implanted SiC-SiO, layer system. (C) 1998 Elsevier Science B.V. All rights reserved.