HIGH-ENERGY CU AND O ION COIMPLANTATION INTO SILICA GLASSES

Citation
S. Nakao et al., HIGH-ENERGY CU AND O ION COIMPLANTATION INTO SILICA GLASSES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 246-251
Citations number
11
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
ISSN journal
0168583X
Volume
141
Issue
1-4
Year of publication
1998
Pages
246 - 251
Database
ISI
SICI code
0168-583X(1998)141:1-4<246:HCAOIC>2.0.ZU;2-7
Abstract
Optical and structural changes of silica glass substrates implanted wi th Cu and O ions and subjected to thermal annealing, are examined as a function of the implantation sequence by optical absorption, Rutherfo rd Backscattering Spectrometry (RBS) and thin film X-ray diffraction ( XRD) measurements. Before annealing, the distribution of Cu is affecte d by the implantation sequence and O- followed by Cu-implantation lead s to fewer Cu nanoparticles than the Cu- followed by O ion implantatio n. After annealing, however, the redistribution behavior of Cu and opt ical absorption features are similar for both co-implanted samples. Na nocrystals of Cu2O are mainly formed by annealing and the absorption p eaks at about 340, 450 and 480 nm are observed for the co-implanted sa mples. The peaks are possibly evidence for the presence of the copper oxide nanocrystals. (C) 1998 Elsevier Science B.V. All rights reserved .