ANNEALING BEHAVIOR OF TIN IMPLANTED SILICA

Authors
TUNG YS UEDA A MU R WU M CHEN J GU Z HENDERSON DO COLLINS WE WHITE CW ZHUR R
Citation
Ys. Tung et al., ANNEALING BEHAVIOR OF TIN IMPLANTED SILICA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 279-283
Citations number
12
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
141
Issue
1-4
Year of publication
1998
Pages
279 - 283
Database
ISI
SICI code
0168-583X(1998)141:1-4<279:ABOTIS>2.0.ZU;2-2
Abstract
Tin ions were implanted into silica substrates at 275 keV. The samples were annealed at 300-1000 degrees C. The as-implanted and annealed sa mples were studied by the infrared specular reflectance technique. Kra mers-Kronig transformation (KKT) was carried out on the reflectance sp ectra to obtain n, k, transverse optical (TO), and longitudinal optica l (LO) spectra. Based on these spectra, we can understand the effects of ion implantation and annealing on the Si-O-Si bond angle, Si-O-Si b ond breaking, and density change of implanted silica. (C) 1998 Publish ed by Elsevier Science B.V. All rights reserved.