HETEROEPITAXIAL GROWTH OF GAAS ON SI SUBSTRATES USING LOW-ENERGY GA AND AS ION-BEAMS

GaAs thin films were heteroepitaxially grown on (1 0 0) and (1 1 1) Si substrates at a temperature of 500 degrees C using Ga and As ion beam s at energies lower than about 50 eV. The growth rates increased with decreasing ion energy. However, the GaAs films were heteroepitaxially grown on the (1 0 0) and (1 1 1) Si substrates by mixed beams containi ng larger amounts of the neutral Ga and As molecular beams added to th e ion beams even when the ion beams were accelerated to energies highe r than 60 eV. (C) 1998 Elsevier Science B.V. All rights reserved.