M. Coeck et al., COMPARISON OF THE EFFECT OF FAST-NEUTRON IRRADIATION ON THE INDUCED TUNNELING STATES IN SILICON AND QUARTZ, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 585-588
We have performed low-temperature ultrasonic attenuation measurements
on bulk single-crystalline silicon irradiated with a fast-neutron dose
of 3.2 x 10(21) n/cm(2) (E > 0.1 MeV) at a frequency of 283 MHz. The
data are analyzed in the framework of the tunneling model (TM), A comp
arison of these results with those obtained from similar measurements
performed on neutron-irradiated quartz is made in view of the differen
ces in radiation damage. We found that the irradiation dose has to be
three orders of magnitude higher for silicon than for quartz in order
to obtain the same effect in the ultrasonic attenuation. (C) 1998 Else
vier Science B.V. All rights reserved.